3pcs 850nm 1000mW Infrared 5.6mm TO-18 Laser Diode 1W IR AlGaAs Semiconductor LD

Description

3pcs 850nm 1000mW IR 5.6mm TO18 Laser Diode
Features:
.
Wavelength: 850nm (±5nm)
Output power: 1W
Threshold current: <600mA
Forward current: <1400mA
Forward voltage: 1.9V-2.2V
Details:
850nm AlGaAs quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability.
It is CW multi-mode injection semiconductor laser available on C-mount, B-mount and Q-mount. It's suitable for application in various opto-electronic systems.
Package:
3x 850nm 1W 5.6mm Laser Diode
Payment Method: PayPal preferred
Shippment:
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also will be affected by many factors, such as holidays, weather conditions etc, If you have not received your shipment within 30 days from payment, please contact us.
Returns & Replacements & Repair
We accept returns & replacements within 14 days from the day the customer receive the products, please make first contact
within 14 days from receiving the order. Products should be returned in original condition. As a benefit to our customers, we
also provide repair within 3 months from the day when this item is shipped out, after repair is done, we will send you the
item, but the customer should pay both shipping ways.
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