850nm 1000mW IR 5.6mm TO18 Laser Diode 1W Infrared Semiconductor LD

Description

850nm 1000mW IR 5.6mm TO-18 Laser Diode
Features:                                                                           .
Wavelength: 850nm (±5nm)
Output power: 1W
Multi-mode
Threshold current: <600mA
Forward current: <1400mA
Forward voltage: 1.9V-2.2V
Details:
850nm AlGaAs quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability.
It is CW multi-mode injection semiconductor laser available on C-mount, B-mount and Q-mount. It's suitable for application in various opto-electronic systems.
Package:
1x 850nm 1W 5.6mm Laser Diode
Payment Meth
od:
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y
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d
Shippment:
1. Shipping to international by China Post Airmail, every parcel will be registered w
ith tracking number. We can also ship by FedEx/TNT/EMS for alternative shipping method for corresponding fees. Please let us know before payment if you need split shipment.
2.International shipping requires complicated shipping procedures (such as both countries customs, transit stations etc.), also will be affected by many factors, such as holidays, weather conditions etc, If you have not received your shipment within 30 days from payment, please contact us.
Returns & Replacements & Repair:
We accept returns & replacements within 30 days from the day the customer receive the products, please make first contact within 30 days from receiving the order. Products should be returned in original condition. As a benefit to our customers, we also provide repair within 3 months from the day when this item is shipped out, after repair is done, we will send you the item, but the customer should pay both shipping ways.
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